Title:
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2005175220
Kind Code:
A
Abstract:
To achieve soft recovery of inverse recovery characteristics of a semiconductor device having a repetition structure in a drift region.
In the drift region, an n-type partial region 22 containing n-type impurities extending in a direction between electrodes and a p-type partial region 24 containing p-type impurities extending in a direction between electrodes are repeated alternately in a place wherein they are orthogonal to each other. A first insulating film 28a is formed in an interface between the p-type partial region 24 and the n-type partial region 22. The first insulating film 28a extends inside a body region 32.
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Inventors:
SUZUKI TAKASHI
TADANO HIROSHI
TADANO HIROSHI
Application Number:
JP2003413557A
Publication Date:
June 30, 2005
Filing Date:
December 11, 2003
Export Citation:
Assignee:
TOYOTA CENTRAL RES & DEV
International Classes:
H01L29/06; H01L21/336; H01L29/10; H01L29/78; H01L29/786; (IPC1-7): H01L29/78; H01L21/336; H01L29/06; H01L29/786
Attorney, Agent or Firm:
Kaiyu International Patent Office