To provide a semiconductor device capable of detecting uniformly an infrared ray with high sensitivity, as the semiconductor device for detecting the infrared ray, and capable of restraining a manufacturing cost, and to provide its manufacturing method.
This semiconductor device 50 has an infrared absorption part 5 for absorbing the infrared ray emitted from a measuring object, and a temperature detecting part 6 for detecting a temperature change of the infrared absorption part 5. A cavity part 3 is formed to separate thermally a thermal separation area 1 formed with the temperature detecting part 6 from a silicon substrate 2, in an under side of the temperature detecting part 6, and the cavity part 3 is formed into a substantially uniform height.
SAKAGUCHI KIYOBUMI
Ishibashi Masayuki
Shinichi Iwata
Masaaki Ogata