To improve an yield in a semiconductor device which includes a bonding pad having a wiring layer containing aluminum, and to provide its manufacturing method.
The method for manufacturing the semiconductor device comprises a process for etching a part of a anti-reflection layer 23A (containing e.g., a titanium alloy), and performing removal which is formed on the second wiring layer 22 (containing e.g., aluminum) at the most upper layer of a semiconductor substrate 10; a process for forming a passivation layer 25A which covers the anti-reflection layer 23A and a part of the second wiring layer 22, where the layer 23A is not formed, and includes an opening 24 for exposing the other part of the second wiring layer 22; and a process for separating the semiconductor substrate 10 into a plurality of semiconductor chips by dicing. Consequently, the anti-reflection layer 23A will not be exposed in the opening 24, and dissolution of the second wiring layer 22 due to the battery reaction of the second wiring layer 22 with the reflection preventing layer 23A will be suppressed, which has occurred in the conventional methods.
SUZUKI TAKUYA
TSUKADA YUJI
| JPH02205323A | 1990-08-15 | |||
| JPH11312670A | 1999-11-09 | |||
| JPH07335647A | 1995-12-22 | |||
| JP2001196413A | 2001-07-19 | |||
| JPH0215615A | 1990-01-19 | |||
| JPS61185928A | 1986-08-19 | |||
| JPH04233228A | 1992-08-21 |
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