Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
Document Type and Number:
Japanese Patent JP2016162785
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device which sufficiently inhibits reverse leakage current while allowing options of materials of a Schottky electrode and an insulation film to be broadened.SOLUTION: A semiconductor device comprises: a semiconductor layer which has a mesa structure forming a tableland shape having an upper surface and a side surface, and a peripheral surface prevailing around the mesa structure; a Schottky electrode which forms Schottky junction with the upper surface; an insulation film which is formed from the peripheral surface across the side surface to a surface of the Schottky electrode and has an opening on the Schottky electrode; and a wiring electrode which is electrically connected with the Schottky electrode inside the opening and which is formed from the inside of the opening across a portion formed on the side surface out of portions of the insulation film to a surface of a portion formed on the peripheral surface out of the portions of the insulation film.SELECTED DRAWING: Figure 1
Inventors:
HASEGAWA KAZUYA
OKA TORU
TANAKA SHIGEAKI
OKA TORU
TANAKA SHIGEAKI
Application Number:
JP2015037508A
Publication Date:
September 05, 2016
Filing Date:
February 27, 2015
Export Citation:
Assignee:
TOYODA GOSEI KK
International Classes:
H01L29/872; H01L21/28; H01L21/329; H01L29/06; H01L29/41; H01L29/47
Domestic Patent References:
| JP2013102081A | 2013-05-23 | |||
| JPH08139341A | 1996-05-31 | |||
| JP2015023072A | 2015-02-02 | |||
| JP2015023073A | 2015-02-02 |
Foreign References:
| WO2010016388A1 | 2010-02-11 | |||
| WO2008117718A1 | 2008-10-02 |
Attorney, Agent or Firm:
Meisei International Patent Office
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