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Title:
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2017201649
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To achieve both of reduction in manufacturing cost and improvement in optical performance of a light receiving element in a semiconductor device including the light receiving element.SOLUTION: A semiconductor device is formed by a selective epitaxial growth method in which for example, a p-type germanium layer PGL, an intrinsic germanium layer IGL, and an n-type germanium layer PGL constituting a structure of a Ge photodiode are made continuous. An insulation film IF having an opening OP on a silicon layer SL of an SOI substrate IS is formed and the intrinsic germanium layer IGL is formed so as to protrude up to onto the insulation film IF from the inside of an opening OP. In other words, a cross-sectional shape of the intrinsic germanium layer IGL is made to have a mushroom shape by utilizing the insulation film IF forming the opening OP.SELECTED DRAWING: Figure 4

Inventors:
USAMI TATSUYA
Application Number:
JP2016092400A
Publication Date:
November 09, 2017
Filing Date:
May 02, 2016
Export Citation:
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Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L31/10; G02B6/12; H01L31/0232
Domestic Patent References:
JP2011091354A2011-05-06
JP2010536170A2010-11-25
JP2008546181A2008-12-18
Foreign References:
WO2013121926A12013-08-22
US7871854B12011-01-18
Attorney, Agent or Firm:
Tsutsui International Patent Office