Title:
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2023135385
Kind Code:
A
Abstract:
To provide a semiconductor device capable of suitably forming a high-concentration impurity layer in a semiconductor layer and a method for manufacturing the same.SOLUTION: According to an embodiment, a method for manufacturing a semiconductor device includes forming a hole in a first film and forming a semiconductor layer on a side surface of the first film in the hole. In addition, the method includes forming a second film on a side surface of a first region of the semiconductor layer, forming a third film on a side surface of a second region above the first region in the semiconductor layer and exposing the side surface of the first region of the semiconductor layer by removing the second film after forming the third film. Furthermore, the method includes forming a fourth film containing a plurality of first atoms on the side surface of the first region of the semiconductor layer after removing the second film and diffusing the first atoms in the fourth film into the first region of the semiconductor layer.SELECTED DRAWING: Figure 22
Inventors:
YANAI YUMI
FUJITA HIROSHI
KOIDE TATSUHIKO
FUJITA HIROSHI
KOIDE TATSUHIKO
Application Number:
JP2022040557A
Publication Date:
September 28, 2023
Filing Date:
March 15, 2022
Export Citation:
Assignee:
KIOXIA CORP
International Classes:
H10B43/27; H01L21/336
Attorney, Agent or Firm:
Yukitaka Nakamura
Manabu Miyajima
Takeshi Sekine
Akira Akaoka
Suguru Yamanoi
Manabu Miyajima
Takeshi Sekine
Akira Akaoka
Suguru Yamanoi
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