Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR THE SAME
Document Type and Number:
Japanese Patent JP2023177917
Kind Code:
A
Abstract:
To provide a manufacturing method for a semiconductor device in which substrates with metal electrodes can be bonded together at low temperature and low pressure.SOLUTION: A manufacturing method for a semiconductor device includes the steps of: preparing a first substrate including a plurality of first metal electrodes and a first insulating part disposed surrounding the first metal electrodes, and a second substrate including a plurality of second metal electrodes and a second insulating part disposed surrounding the second metal electrodes; applying conductive ink by an ink-jetting method on the first metal electrodes and/or the second metal electrodes; overlapping the first substrate and the second substrate so that the first metal electrodes and the second metal electrodes face each other through the conductive ink or a solidified substance thereof; and calcining the conductive ink or the solidified substance thereof by heating.SELECTED DRAWING: None
Inventors:
INADA SATOSHI
FURUSHO RIKIA
YAMADA YASUHARU
FURUSHO RIKIA
YAMADA YASUHARU
Application Number:
JP2022090888A
Publication Date:
December 14, 2023
Filing Date:
June 03, 2022
Export Citation:
Assignee:
MITSUI CHEMICALS INC
International Classes:
H01L21/02
Attorney, Agent or Firm:
Patent Attorney Corporation Washida International Patent Office