Title:
Semiconductor device and its manufacturing method
Document Type and Number:
Japanese Patent JP6236456
Kind Code:
B2
Abstract:
In a semiconductor device having a silicon carbide device, a technique capable of suppressing variation in a breakdown voltage and achieving reduction in an area of a termination structure is provided. In order to solve the above-described problem, in the present invention, in a semiconductor device having a silicon carbide device, a p-type first region and a p-type second region provided to be closer to an outer peripheral side than the first region are provided in a junction termination portion, a first concentration gradient is provided in the first region, and a second concentration gradient larger than the first concentration gradient is provided in the second region.
Inventors:
Kazuhiro Mochizuki
Norifumi Kameyo
Norifumi Kameyo
Application Number:
JP2015535257A
Publication Date:
November 22, 2017
Filing Date:
September 09, 2013
Export Citation:
Assignee:
株式会社日立製作所
International Classes:
H01L29/861; H01L21/329; H01L29/06; H01L29/868; H01L29/872
Domestic Patent References:
| JP2010267783A | ||||
| JP2012195519A | ||||
| JP2012527117A |
Foreign References:
| WO2013136550A1 | ||||
| WO2014045480A1 |
Attorney, Agent or Firm:
Tsutsui International Patent Office