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Title:
Semiconductor device and its manufacturing method
Document Type and Number:
Japanese Patent JP6239250
Kind Code:
B2
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Inventors:
Chiharu Ota
Tatsuo Shimizu
Joji Nishio
Takashi Shito
Application Number:
JP2013059831A
Publication Date:
November 29, 2017
Filing Date:
March 22, 2013
Export Citation:
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Assignee:
Toshiba Corporation
International Classes:
H01L29/861; H01L21/28; H01L21/329; H01L21/337; H01L21/338; H01L29/12; H01L29/16; H01L29/167; H01L29/41; H01L29/417; H01L29/47; H01L29/739; H01L29/78; H01L29/808; H01L29/812; H01L29/868; H01L29/872
Foreign References:
US20120228630
Other References:
MASANORI MIYATA, YOSHINORI HAYAFUJI,Theoretical Study of Acceptor-Donor Complexes in 4H-SiC,Applied Physics Express,日本,The Japan Society of Applied Physics,2008年,1,111401-1,2,3
Attorney, Agent or Firm:
Tetsuma Ikegami
Akira Sudo
Mitsuyuki Matsuyama



 
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