Title:
半導体装置およびその製造方法
Document Type and Number:
Japanese Patent JP7327905
Kind Code:
B2
Abstract:
A semiconductor device includes an inversion type semiconductor element, which has: a substrate; a drift layer; a saturation current suppression layer; a current dispersion layer; a base region; a source region; a connection layer; a plurality of trench gate structures; an interlayer insulation film; a source electrode; and a drain electrode. A channel region is provided in a portion of the base region in contact with each trench gate structure by applying a gate voltage to the gate electrode and applying a normal operation voltage as a drain voltage to the drain electrode; and a current flows between the source electrode and the drain electrode through the source region and the JFET portion.
Inventors:
Yuichi Takeuchi
Minotani Shuhei
Yasuhiro Ebihara
Yusuke Yamashita
Tadashi Misumi
Minotani Shuhei
Yasuhiro Ebihara
Yusuke Yamashita
Tadashi Misumi
Application Number:
JP2018074816A
Publication Date:
August 16, 2023
Filing Date:
April 09, 2018
Export Citation:
Assignee:
株式会社デンソー
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12; H01L29/739
Domestic Patent References:
| JP2016066780A | ||||
| JP2012169386A |
Attorney, Agent or Firm:
Patent Attorney Corporation Yuuai Patent Office
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