Title:
Semiconductor device and its producing method
Document Type and Number:
Japanese Patent JP6010005
Kind Code:
B2
Abstract:
According to one embodiment, a semiconductor device includes a MRAM chip including a semiconductor substrate and a memory cell array area includes magnetoresistive elements which are provided on the semiconductor substrate, and a magnetic shield layer separated from the MRAM chip, surrounding the memory cell array area in a circumferential direction of the MRAM chip, and having a closed magnetic path.
Inventors:
Kenji Noma
Application Number:
JP2013186599A
Publication Date:
October 19, 2016
Filing Date:
September 09, 2013
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/8246; H01L27/105; H01L43/02; H01L43/08
Domestic Patent References:
| JP2003115578A | ||||
| JP2012109307A | ||||
| JP2005158985A | ||||
| JP2013089662A |
Foreign References:
| WO2011046091A1 | ||||
| US20120119338 | ||||
| US20060289970 |
Attorney, Agent or Firm:
Suzue International Patent Office
Previous Patent: An image processing device, an image processing method, and an image processing program
Next Patent: JPS6010006
Next Patent: JPS6010006