PURPOSE: To prevent the generation of defective electrical connection by filling at least a space between a semiconductor chip and an auxiliary wiring plate piece with a fusion-bondable polyimide resin layer.
CONSTITUTION: The entire area excluding a circuit formation surface of a semiconductor chip 1 (an area on the electrode 11 side) is encapsulated with a resin 4, and a space between the chip 1 and auxiliary wiring plate piece 2 is filled with a thermal sticking polyimide resin layer 3. The resin 3 strongly adheres to the chip 1 and wiring plate piece 2, therefore, when a semiconductor device is mounted on a circuit board by welding, any space between the chip 1 and layer 3 caused by such a heat treatment is hardly generated. A formation material for the layer 3 is preferably a fusion-bondable polyimide resin with a glass transition temperature of at most 300°C. Thus, the generation of electrical connection of a semiconductor device can be prevented.
NAGASAWA TOKU
TANIGAWA SATOSHI
USUI HIDEYUKI
YOSHIO NOBUHIKO
ITOU HISATAKA
OKAWA TADAO