SEMICONDUCTOR DEVICE AND ITS PRODUCTION

Japanese Patent JPH08186265

A

PURPOSE: To obtain a semiconductor device that is given no affection from a parasitic transistor by making the upper part of side surface of semiconductor layer to be round and forming a U-shaped recessed part in an area adjacent to the lower end of the surface on the semiconductor layer side of an insulation layer.

CONSTITUTION: A buried oxide film 2 is formed on a silicon substrate 1, and a semiconductor layer 3 for NMOS area and a semiconductor layer 3 for PMOS area are formed on the film 2. The upper part of the side of an SOI layer 3 in an NMOS area is made round. Thus, the concentration of electric field in the upper part thereof can be prevented. In addition, a U-shaped recessed part 2a is formed in an area between the layer 3 of the NMOS area the layer 3 of the PMOS area, on the main surface of the film 2. Further, an interlayer oxide film 9 is formed in a manner to cover the layer 3 and electrode 6.

IWAMATSU TOSHIAKI
YAMAGUCHI YASUO
MAEDA SHIGENOBU
MIYAMOTO SHOICHI
FURUKAWA AKIHIKO
INOUE YASUAKI

JP33402594A

July 16, 1996

December 15, 1994

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MITSUBISHI ELECTRIC CORP

H01L21/336; H01L21/76; H01L21/762; H01L21/8238; H01L21/84; H01L21/764; H01L27/08; H01L27/092; H01L27/12; H01L29/786; H01L21/265; (IPC1-7): H01L29/786; H01L21/764; H01L21/8238; H01L27/092; H01L27/08; H01L27/12

Fukami Hisaro (3 outside)

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