SEMICONDUCTOR DEVICE, LIGHT VALVE DEVICE, AND PROJECTOR

Japanese Patent JP2958474

B2

PROBLEM TO BE SOLVED: To enable extremely high pixel density, by using a substrate having at least multiple structure composed of an insulating carrier layer and a silicon semiconductor single crystal thin film layer formed on it.
SOLUTION: For example, a light valve device is composed of a driving substrate 1, an opposite substrate 8 arranged in opposition to the driving substrate 1, and electro-optical substance layers, for example, a liquid crystal layer 9 arranged between the driving substrate 1 and the opposite substrate 8. The driving substrate 1 has an at least double-layer structure composed of a carrier layer 2 made out of quartz glass, and a single crystalline silicon semiconductor film layer 3 having a crystal orientation of <100> 0.0±1.0°. A driving circuit is composed of an integrated circuit formed in this single crystal silicon semiconductor film layer 3. And each pixel electrode 12 formed in the pixel regions 5 integrated circuit chips 4 acts on the liquid crystal layer 9 excited selectively by the conduction of a transistor element connected to the electrode, controls its light transmitting property, and functions as a light valve.

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HAYASHI YUTAKA
KAMYA MASAAKI
KOJIMA YOSHIKAZU
TAKASU HIROAKI

JP14811898A

October 06, 1999

May 28, 1998

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SEIKOO INSUTSURUMENTSU KK
KOGYO GIJUTSU INCHO

G02F1/13; G02F1/136; G02F1/1368; G09F9/30; H01L21/336; H01L27/12; H01L29/786; (IPC1-7): G02F1/136; G02F1/13

JP365928A
JP6010676A
JP5945486A
JP58117584A
JP57210657A
JP63101829A
JP51146176A
JP5466767A
JP6355529A
JP63101832A
JP58128475U
JP5854679U

Keinosuke Hayashi
Keinosuke Hayashi (1 person outside)

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