To provide a semiconductor device for driving an electrothermal conversion element in which the current level can be increased by a high withstanding voltage, high speed operation can be effected with a low on resistance, and high integration and energy saving can be realized while facilitating inter-element isolation.
An electrothermal conversion element and a switching element for supplying power thereto are integrated in a p-type semiconductor substrate 1. The switching element is an insulated gate electric field effect transistor having an n-type well region 2 formed on the surface of the semiconductor substrate 1, a p-type base region 6 formed contiguously thereto and providing a channel region, an n-type source region 7 formed on the surface side thereof, n-type drain regions 8 and 9 formed on the surface side of the n-type well region 2, and a gate electrode 4 provided on the channel region through a gate insulation film. The base region 6 comprises a semiconductor provided to separate the drain regions 8 and 9 laterally and having an impurity concentration higher than that of the well region 2.
| JP2002043641 | PIEZOELECTRIC ELEMENT AND INK JET RECORDING HEAD USING THE SAME |
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| WO/2018/150844 | PIEZOELECTRIC ELEMENT, ACTUATOR, AND LIQUID DROPLET EJECTION HEAD |
SHIMOTSUSA MINEO
FUJITA KATSURA
Katsuhiro Ito
Ishibashi Masayuki