SEMICONDUCTOR DEVICE, MANUFACTURE OF SEMICONDUCTOR DEVICE, FILM TRANSISTOR, MANUFACTURE OF FILM TRANSISTOR, AND DISPLAY

Japanese Patent JPH08195494

A

PURPOSE: To provide a manufacture of a semiconductor device equipped with a gate insulating film being made at a low temperature and small in interface level.

CONSTITUTION: A polycrystalline silicon film 2 is made on a transparent insulating substrate 1. An extremely thin oxide film 3 approximately 50-100 is made on the polycrystalline silicon film by irradiation with UV-O3, oxidation in steam, RTA treatment in oxidizing gas atmosphere, etc. An insulating film 4 such as a silicon oxide film, silicon nitride film, or the like is made on the oxide film 3. A gate insulating film 5 is composed of the oxide film 3 and the insulating film 4. The whole face of the device is trradiated with light by RTA method. By this RTA method, the reduction of the level of interface between the polycrystalline silicon film 2 and the oxide film 3, the improvement of the film quality of the insulating film 4, and the improvement of the crystal property of the polcrystalline silicon film 2 can be materialized.

JP3195157	PRODUCTION FOR SEMICONDUCTOR SUBSTRATE AND PRODUCTION DEVICE THEREFOR
JPH07325323	LIQUID CRYSTAL DISPLAY DEVICE
JPH06138851	ACTIVE MATRIX LIQUID CRYSTAL DISPLAY

ABE HISASHI
TAGUCHI EIJI
ODA NOBUHIKO
SEGAWA YASUO

JP12402895A

July 30, 1996

May 23, 1995

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SANYO ELECTRIC CO

G02F1/136; G02F1/1368; H01L21/20; H01L21/316; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; G02F1/136; H01L21/20; H01L21/316; H01L21/336

Hironobu Onda

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