Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3300153
Kind Code:
B2
Abstract:
PURPOSE: To obtain a method for manufacturing a semiconductor element such as a thin-film transistor by crystallizing a silicon film in a substantially amorphous state by annealing it at a temperature lower than the temperature of crystallization of ordinary amorphous silicon or than a glass transition point of a substrate.
CONSTITUTION: A film, particles, a cluster or the like shaped in an island, a line, a stripe or a dot and having nickel, iron, cobalt, platinum or a siliside thereof, each sort of salt thereof or the like is formed selectively on the upper or lower side of an amorphous silicon film 1 and annealed at a temperature lower than the temperature of crystallization of ordinary amorphous silicon or than a glass transition point of a substrate. Starting from this, crystallization is made to advance and thereby a crystal silicon film 3 is obtained. By using this crystal silicon film 3, moreover, a semiconductor element such as a thin film transistor is formed.
Inventors:
Hongyong Zhang
Hideki Uochi
Toru Takayama
Shunpei Yamazaki
Yasuhiko Takemura
Hideki Uochi
Toru Takayama
Shunpei Yamazaki
Yasuhiko Takemura
Application Number:
JP4052294A
Publication Date:
July 08, 2002
Filing Date:
February 15, 1994
Export Citation:
Assignee:
Semiconductor Energy Laboratory Co., Ltd.
International Classes:
H01L21/20; H01L21/205; H01L21/268; H01L21/324; H01L21/336; H01L29/78; H01L29/786; (IPC1-7): H01L21/336; H01L21/20; H01L29/786
Domestic Patent References:
| JP2140915A | ||||
| JP3280420A | ||||
| JP3219628A | ||||
| JP62299035A | ||||
| JP322540A | ||||
| JP62104021A | ||||
| JP5335337A |
Attorney, Agent or Firm:
Hirokuni Kamo