Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH04330732
Kind Code:
A
Abstract:
PURPOSE: To restrain a change in the characteristic of a semiconductor device when hot carriers are injected and to increase the current driving ability of the semiconductor device in the semiconductor device such as a MOS transistor or the like.
CONSTITUTION: In a MOS transistor, by a so-called LDD structure, which is provided with a low-concentration impurity region, a high-concentration impurity region 15 is overlapped with the lower part of ends of a gate electrode 13 in only a source region. In a drain region, the high-concentration impurity region 15 is formed so as to be separated from the gate electrode 13 via a low- concentration impurity region 14 in the same manner as in conventional cases.
Inventors:
FUKURA MITSUNORI
Application Number:
JP10073091A
Publication Date:
November 18, 1992
Filing Date:
May 02, 1991
Export Citation:
Assignee:
MATSUSHITA ELECTRONICS CORP
International Classes:
H01L21/265; H01L21/336; H01L29/78; (IPC1-7): H01L21/265; H01L21/336; H01L29/784
Attorney, Agent or Firm:
Akira Kobiji (2 outside)