PURPOSE: To provide a semiconductor device and a manufacturing method thereof, which is capable of preventing nitrogen from being mixed in an aluminum film in view of an improvement of a formation method of a contact of a wiring film of a semiconductor device, by altering a manufacturing process so as to be carried out simply and easily.

CONSTITUTION: A contact of a wiring film is constructed so as to include a structure wherein a high melting point metal film 2, a high melting point metal nitride film 3, the second high melting point metal film 4, and an aluminum- containing film 5 are successively laminated. The title method comprises the processes of forming the high melting point metal film 2 on the surface of a semiconductor substrate 1, of forming the high melting point metal nitride film 3 on the surface of the high melting point metal film 2, of forming the second high melting point metal film 4 on the surface of the high melting point metal nitride film 4, and of forming the aluminum-containing film 5 on the surface of the second high melting point metal film 4.