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Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPH0737836
Kind Code:
A
Abstract:

PURPOSE: To inhibit the generation of the abnormal growth of a conductive film, such as a tungsten film, which is deposited by a CVD method, and to obtain a semiconductor device, which is free from a pattern defect and is never counted as a foreign substance.

CONSTITUTION: A semiconductor device is constituted of a semiconductor substrate 1, an oxide film 2, which is formed on this substrate 1 and has an opening to reach the main surface of the substrate 1, a conductive film 3A, which is buried in the opening part formed in this film 2 and is subjected to lamp annealing, a conductive film 4 formed on this film 3A and a metal wiring 5 connected to at least the film 4.


Inventors:
Yoshimura, Hidefumi
Application Number:
JP1993000176639
Publication Date:
February 07, 1995
Filing Date:
July 16, 1993
Export Citation:
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Assignee:
MITSUBISHI ELECTRIC CORP
International Classes:
H01L21/285; H01L21/28; H01L21/768; H01L23/522; (IPC1-7): H01L21/285; H01L21/768
Attorney, Agent or Firm:
曾我 道照 (外6名)



 
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