To provide a semiconductor device which operates with a low power voltage and in which a logic circuit is constituted with a drastically-reduced number of devices.
A buried oxide film 102 is formed on a silicon substrate 101, and a silicon p-type SOI layer 103 is formed on the buried oxide film 102. A first n-type diffusion layer 107a and a second n-type diffusion layer 107b are formed on both sides of the p-type SOI layer 103, and a p-type impurity diffusion layer 108 is formed at a region adjoining to the p-type SOI layer 103. The p-type SOI layer 103, the first and second n-type diffusion layers 107a and 107b, and the p-type impurity diffusion layer 108 are surrounded by a device isolation oxide film 104 formed on the buried oxide film 102, thereby completely isolating from each other.
MORIMOTO TADASHI
IRIE SHIGEO
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