SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Title:

SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF

Document Type and Number:

Japanese Patent JPH114002

Kind Code:

A

Abstract:

To improve the heat resistance of an Al gate electrode which becomes a problem in the case of constituting an active layer by a crystal Si film, in a TFT of a bottom gate type.

A pattern which is to be the base of a gate electrode on which a Ti film 102 and an Al film 103 are laminated is formed on a glass substrate 101. The Ti film 102 is heat-treated, after being side etched and a hillock and whiskers are generated on the surface of an Al pattern 103. Then, the Al pattern 103 is turned into an anode, and an anode oxide film 105 is formed. At this time, anode oxidation is advanced to the lower part of an edge part around the remaining Al pattern 100. After that, a gate insulation film 106 and an amorphous Si film 107 are formed, and amorphous Si is heat-treated and crystallized. At that time, since the anode oxide film is formed, an Al material is suppressed from fusing, so that flowing out and spreading and the heat resistance is improved in the case of utilizing Al for the electrode.

Inventors:

YAMAZAKI SHUNPEI
YAMAGUCHI NAOAKI
NAKAJIMA SETSUO

Application Number:

JP17109997A

Publication Date:

January 06, 1999

Filing Date:

June 11, 1997

Export Citation:

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Assignee:

SEMICONDUCTOR ENERGY LAB

International Classes:

H01L21/28; H01L21/316; H01L21/336; H01L29/786; (IPC1-7): H01L29/786; H01L21/28; H01L21/316; H01L21/336

Next Patent: JPH0114003