Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS59139643
Kind Code:
A
Abstract:
PURPOSE:To obtain a flat LOCOS region, in which an abnormal region is hardly generated, in excellent productivity, and to improve the degree of integration by forming a fine groove section to the periphery being in contact with the LOCOS region of an active region and burying a nitride film into the fine groove section. CONSTITUTION:A third SiO2 oxide film 15 is formed through heat treatment in an oxidation atmosphere oven. The oxide film 15 is not formed on the surface of an Si3N4 film 14a because the oxidation of the Si3N4 film 14a of a side surface is very slow. Only the Si3N4 film 14a of the side surface is removed, and Si in the peripheral section of a stepped difference 10a is exposed. Si In the peripheral section is etched in a (self-alignment) manner to form a groove 16 intruding to the side surface. The whole surface is coated with a third Si3N4 film 17 to bury the groove 16. Only the Si3N4 film 17 in the side surface and the groove 16 remains through etching, and an Si wafer 10 in which the Si3N4 film 17 is buried is completed. The oxidation intrusion of Si to a section as an MOS type active region surrounded by the third Si3N4 film 17 is inhibited, and an insulating film, in which a bird-beak region (A) is suppressed, i.e. a LOCOS, can be formed.
Inventors:
AZUMA TAKASHI
Application Number:
JP1274483A
Publication Date:
August 10, 1984
Filing Date:
January 31, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/31; H01L21/32; H01L21/76; H01L21/762; (IPC1-7): H01L21/95
Attorney, Agent or Firm:
Katsuo Ogawa (1 person outside)