Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JPS6123326
Kind Code:
A
Abstract:
PURPOSE:To form ultraminiature pattern without increase of a number of processes and turn around time by specifically defining a product of absorption coefficient for wavelength of light used for photolithography of insulation film on metal wiring and thickness of film. CONSTITUTION:When an absorption coefficient of an insulation film 2 for the wavelength of light in such a case as forming a pattern of silicon nitride film 2 as an insulation film on a metal wiring 3 is assumed as alpha(cm<-1>) and a film thickness as d(cm), a product of alpha and (d) is set to 0.8 or more. For example, when intensity of light passing through the resist layer 1 is assumed as I0, this light passes through the silicon nitride film 2, and is reflected at the surface of a metal wiring layer 3. An intensity of reflected light when it returns again to the interface between the silicon nitride film 2 and resist layer 1 is indicated as I=I0 exp (-2.alpha.d) in accordance with the Lambert-Beer's law. In order to give the effect similar to that of reflection preventing film to the silicon nitride film 2 regarding intensity of reflected light, it is enough to set a value of exp (-2. alpha.d) to 0.2-0.3 or less. Therefore, this condition can be attained when a product of alpha and (d) is 0.8 or more.
Inventors:
MAEDA MASAHIKO
MAKINO TAKAHIRO
NAKAMURA HIROAKI
MAKINO TAKAHIRO
NAKAMURA HIROAKI
Application Number:
JP14323184A
Publication Date:
January 31, 1986
Filing Date:
July 12, 1984
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
H01L21/3213; H01L21/027; H01L21/318; (IPC1-7): H01L21/318; H01L21/88
Attorney, Agent or Firm:
Masaki Yamakawa