PURPOSE: To eliminate the ooze of a light or the production of a light scatter between light emitting diodes of mesa structure by providing a light shielding region on the separating groove of the diodes.
CONSTITUTION: An amorphous silicon film is coated as a light shielding film 7 on the surface of wafer on which many light emitting diodes 4 of mesa structure are arranged with separating grooves 5. Then, only the film 7 of upside of light emitting units 9 on the surface of the diode 4 are removed by a photolithographic technique. Then, a photosensitive resin is spin coated, only the resin of the upside of the units 9 is photosensed by a lithographic technique, developed and removed, and a photosensitive resin film 8 buried in the recess is formed. The resin film of a buried layer 6 is baked in a mixture gas atmosphere of N2 and O2 to flatten the surface of the film 8, and the film 8 is hardened. Then, electrodes 10 are formed.
TAKANO HIROSHI
HASHIMOTO AKIHIRO
TAKAMORI TAKESHI
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