PURPOSE: To obtain a semiconductor device having excellent reliability and a small size by providing a resin layer filled between a circuit substrate and the face of a face-down bonded semiconductor chip so as to substantially expose the rear face of the chip.

CONSTITUTION: A resin layer 31 filled between a circuit substrate 13 and the face of a semiconductor chip 15 is so provided as to substantially expose the rear face 15b of the chip 15 in a semiconductor device in which the chip 15 is face-down bonded on the substrate 13. After the chip 15 is face-down bonded to the substrate 13, and the periphery of the chip 15 on the substrate 13 is coated at a first temperature with resin 31 which exhibits a first viscosity at the first temperature and a viscosity lower than the first viscosity at a second temperature higher than the first temperature. Then, the substrate 13 coated with the resin 31 is allowed to stand for at the second temperature. The resin 31 is cured at the temperature higher than the second temperature, and a semiconductor device is manufactured.