Title:
SEMICONDUCTOR DEVICE AND MANUFACTURE OF SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JPH05109725
Kind Code:
A
Abstract:
PURPOSE: To obtain a semiconductor device having wiring free from disconnection and short-circuit and having high bonding reliability.
CONSTITUTION: In the method for forming a wiring layer of an integrated circuit, a nickel film layer 9 is formed by electroless plating, after a palladium substitution layer 8 is formed on the surface of an aluminum wiring layer 7. Thereby the aluminum wiring layer 7 is completely covered. Hence disconnection due to electromigration and stress migration and short-circuit due to a hillock can be prevented, and the reliability of wire bonding can be improved.
Inventors:
MURAKAMI HIROAKI
Application Number:
JP27115391A
Publication Date:
April 30, 1993
Filing Date:
October 18, 1991
Export Citation:
Assignee:
SEIKO EPSON CORP
International Classes:
H01L23/52; H01L21/3205; (IPC1-7): H01L21/3205
Attorney, Agent or Firm:
Kisaburo Suzuki (1 outside)