Title:
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE, AND ELECTRONIC DEVICE
Document Type and Number:
Japanese Patent JP2022088180
Kind Code:
A
Abstract:
To achieve a high performance semiconductor device with excellent operation stability.SOLUTION: A semiconductor device 1 comprises: a source electrode 40 provided between a pair of gate finger parts 31 of a group of gate fingers of a gate electrode 30 provided on a surface 20a side of a substrate 20; and a drain finger part 51 of a drain electrode 50 provided between another pair of gate finger parts. In the substrate 20 on a surface side opposite to the surface 20a side, a metal part 70 having a portion 71 overlapped with the source electrode 40 in a flat view and a portion 72 extended to an outer side of the source electrode 40 from the portion 71 are provided. The substrate 20 further comprises a metal part 80 provided between the portion 71 of the metal part 70 and the source electrode 40 to connect them. An increase in flat surface size of the metal part 80 and the source electrode 40 is suppressed, an intervals D0 of the gate finger part 31 group which is alternately provided with the source electrode 40 and the drain finger part 51 is unified to enhance the operation stability of a transistor 10.SELECTED DRAWING: Figure 6
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Inventors:
KURAHASHI NAOKO
Application Number:
JP2020200475A
Publication Date:
June 14, 2022
Filing Date:
December 02, 2020
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/338; H01L21/3205; H01L29/41
Attorney, Agent or Firm:
Fuso International Patent Office
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