SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF GATE OXIDE FILM

Japanese Patent JP2007012684

A

To provide a method for forming a silicon carbide/insulating film interface of high quality, in which an interface level is reduced, and to provide a field effect transistor using a low silicon carbide semiconductor substrate with low on-resistance.

A semiconductor device is provided with a first conduction-type silicon carbide semiconductor substrate, a first conduction-type drift layer formed on one face of the silicon carbide semiconductor substrate, a second conduction-type well region formed in a part of the drift layer, a first conduction-type source region formed in a part of a well layer, a gate oxide film formed on a surface of the well region sandwiched between a drift region and the source region, a part of a surface of the drift layer and a part of a surface of the source region, and a gate electrode formed on a gate oxide film. The gate oxide film has a first layer comprising hafnium oxide and a second layer where silicon oxide is deposited on the first layer.

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MIURA NARIHISA
OZEKI TATSUO
TOKUMITSU EISUKE
HINO SHIRO

JP2005188347A

January 18, 2007

June 28, 2005

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MITSUBISHI ELECTRIC CORP
TOKYO INST TECH

H01L29/78; H01L21/316; H01L21/336; H01L29/12

JP2001024188A	2001-01-26
JP2002524860A	2002-08-06
JP2003243653A	2003-08-29
JP2005310886A	2005-11-04
JP2000106428A	2000-04-11
JP2005166696A	2005-06-23
JP2005101529A	2005-04-14

WO2003047000A1

2003-06-05

Mikio Takeuchi

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