Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD AND SEMICONDUCTOR MANUFACTURING MACHINE
Document Type and Number:
Japanese Patent JP2019165090
Kind Code:
A
Abstract:
To provide a semiconductor device manufacturing method which enables the suitable adjustment of a film thickness of a film on a substrate and a semiconductor manufacturing machine.SOLUTION: A semiconductor device manufacturing method according to an embodiment hereof comprises the steps of: forming a first film on a first substrate; and reducing a film thickness of the first film by alternately executing a plurality of first processes for processing a part of the first film by plasma of a first gas and a plurality of second processes for removing the part of the first film by plasma of a second gas.SELECTED DRAWING: Figure 3
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Inventors:
IMAMURA TSUBASA
Application Number:
JP2018051506A
Publication Date:
September 26, 2019
Filing Date:
March 19, 2018
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
H01L21/3065; H01L21/8239; H01L27/105; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Hiroyuki Nagai
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Takeshi Sekine
Akaoka Akira
Jie Yamanoi
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Takeshi Sekine
Akaoka Akira
Jie Yamanoi