SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Japanese Patent JP2006024895

A

To introduce a large amount of nitrogen to the internal wall oxide film inside a trench, while suppressing deterioration in the reliability of a semiconductor device.

The internal wall oxide film 3 is formed by oxidizing the internal wall of the trench 2 formed in the element isolation region of a silicon substrate 1. Two nitriding processing of thermal nitriding and radical nitriding are performed on the internal wall oxide film 3. A first nitride layer 3a is formed in the vicinity of an interface between the internal wall oxide film 3 and the silicon substrate 1 with the thermal nitriding, and a second nitride layer 3b is formed on the surface of the internal wall oxide film 3 with the radical nitriding process. In the thermal nitriding treatment, the amount of nitrogen to be introduced is suppressed, to the extent that the reliability of the semiconductor device formed in an active region will not deteriorate.

MARUYAMA YOSHITERU
KANEOKA TATSUNORI
UENISHI TOSHIYA

JP2005143533A

January 26, 2006

May 17, 2005

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RENESAS TECH CORP

H01L21/76; H01L21/762; H01L21/8234; H01L21/8239; H01L21/8242; H01L21/8247; H01L27/08; H01L27/088; H01L27/108; H01L27/115; H01L29/78; H01L29/788; H01L29/792

JP2005277196A	2005-10-06
JP2001085511A	2001-03-30
JP2001507864A	2001-06-12
JP2004023008A	2004-01-22
JP2003264248A	2003-09-19

Shigeaki Yoshida
Yoshitake Hidetoshi
Takahiro Arita

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