To provide a semiconductor device which has heat resistance not to cause remelting even though subjected to a heat treatment a plurality of times in a post-process; and which inhibits voids; and which has a Pb-free die bond connection part.
A semiconductor device comprises: a semiconductor chip; a support substrate; and a die bond connection part for connecting the semiconductor chip and the support substrate. The die bond connection part includes a matrix composed of an Sn element or an Sn-containing low-melting-point metal and high-melting-point metal particles which contain Ni and Sn and which are dispersed in the matrix. And surfaces of the high-melting-point metal particles are coated with an intermetallic compound. A content of an Sn element in the die bond connection part is 75-95 mass%.
KIYAMA TOMONORI
KASHIWAGI TOSHINORI
SHIRATORI GO
Takashi Ishida
Tetsuji Koga
Kazuhiro Nakamura
Toko Saito
Shunsuke Mima