SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF THE SAME

Japanese Patent JP2015060905

A

PROBLEM TO BE SOLVED: To provide a semiconductor device and a manufacturing method of the same, which can improve electron field effect mobility.SOLUTION: A semiconductor device according to an embodiment includes a first semiconductor region, a second semiconductor region, a third semiconductor region, a first electrode, a second electrode, a control electrode and an insulation film. The first semiconductor region contains SiC and has a first conductivity type. The second region is provided on the first semiconductor region and has a first surface and contains SiC and has a second conductivity type. The third semiconductor region is provided on the second semiconductor region and contains SiC and has the first conductivity type. The first electrode is electrically connected with the first semiconductor region. The second electrode is electrically connected with the third semiconductor region. The control electrode is provided on the second semiconductor region. The insulation film is provided between the second semiconductor region and the control electrode. The insulation film contacts the first surface and the control electrode and contains nitrogen. A peak position of a nitrogen concentration distribution is separated from the first surface by not less than 2 nm and less than 10 nm and a half band width at the peak is not less than 10 nm and less than 20 nm.

ARIYOSHI KEIKO
SHIMIZU TATSUO
SHINOHE TAKASHI
SENZAKI SUMIHISA
HARADA SHINSUKE
KOJIMA TAKAHITO

JP2013192824A

March 30, 2015

September 18, 2013

Click for automatic bibliography generation  

TOSHIBA CORP
NAT INST OF ADV IND & TECHNOL
FUJI ELECTRIC CO LTD

H01L29/78; H01L21/318; H01L21/336; H01L29/12

JP2011111627A	2011-06-09
JP2011082454A	2011-04-21
JP2005166930A	2005-06-23

WO2012018975A2

2012-02-09

Masahiko Hiugaji

Previous Patent: ELECTRONIC APPARATUS AND MANUFACTURING METHOD OF THE SAME

Next Patent: METHOD OF MANUFACTURING SEPARATOR FOR CAPACITOR