Title:
半導体装置の製造方法及び半導体装置の製造装置
Document Type and Number:
Japanese Patent JP4557503
Kind Code:
B2
Abstract:
To provide a method and an apparatus for manufacturing a semiconductor device, which are capable of properly heating a substrate and preventing the semiconductor devices from deteriorating in yield and performance.
The manufacturing method comprises processes of arranging the substrate 14 having a processing object in a first region A1 inside a light transmitting vessel 17, and heating the substrate with heating rays fed from a second region A2 just under the first region without feeding heating rays from a third region A3 just over the first region A1 to the substrate.
COPYRIGHT: (C)2005,JPO&NCIPI
Inventors:
Keisuke Nakazawa
Osamu Arisumi
Koji Yamakawa
Yoshitaka Tsunashima
Osamu Arisumi
Koji Yamakawa
Yoshitaka Tsunashima
Application Number:
JP2003135988A
Publication Date:
October 06, 2010
Filing Date:
May 14, 2003
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
H01L21/26; H01L27/04; H01L21/265; H01L21/822; H01L21/8246; H01L27/105
Domestic Patent References:
| JP3116828A | ||||
| JP59112611A | ||||
| JP6013565A | ||||
| JP9289175A | ||||
| JP9260614A | ||||
| JP1319934A | ||||
| JP5013355A | ||||
| JP59121832A |
Foreign References:
| WO2002047123A1 |
Attorney, Agent or Firm:
Satoshi Kono
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto
Makoto Nakamura
Kurata Masatoshi
Sadao Muramatsu
Ryo Hashimoto