Login| Sign Up| Help| Contact|

Patent Searching and Data


Title:
半導体装置の製造方法及び半導体装置の製造装置
Document Type and Number:
Japanese Patent JP5389924
Kind Code:
B2
More Like This:
JP2002217482TITANIUM NITRIDE DIFFUSION BARRIER USED IN NON-SILICON TECHNOLOGY AND METHOD
WO/2001/099182INSITU DIFFUSION BARRIER AND COPPER METALLIZATION FOR IMPROVING RELIABILITY OF SEMICONDUCTOR DEVICES
JP6091453A manufacturing method of a silicon carbide semiconductor device, and a silicon carbide semiconductor device
Inventors:
Masamichi Harada
Application Number:
JP2011524859A
Publication Date:
January 15, 2014
Filing Date:
July 30, 2010
Export Citation:
Click for automatic bibliography generation   Help
Assignee:
ULVAC, Inc.
International Classes:
H01L21/285; C23C16/14; C23C16/44; H01L21/28
Domestic Patent References:
JPH10256192A1998-09-25
JPH10287979A1998-10-27
JPH11111698A1999-04-23
JP2002289557A2002-10-04
JPH08104984A1996-04-23
JPH06140343A1994-05-20
JPH1167688A1999-03-09
JP2004324723A2004-11-18
JPH0794488A1995-04-07
JPH10256192A1998-09-25
Attorney, Agent or Firm:
Hironobu Onda
Makoto Onda



 
Previous Patent: DRIVING DEVICE FOR ROTATOR

Next Patent: DEVICE FOR CHECKING FAULTY OPERATION OF PULSE MOTOR