Title:
半導体装置の製造方法、基板処理方法、基板処理装置、およびプログラム
Document Type and Number:
Japanese Patent JP7436438
Kind Code:
B2
Abstract:
There is provided a technique that includes: forming a film containing silicon, a predetermined element, and nitrogen on a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming a first layer by supplying a first gas containing silicon to the substrate; (b) forming a second layer by supplying a second gas containing silicon and differing in molecular structure from the first gas, to the substrate; (c) supplying a third gas containing the predetermined element to the substrate; and (d) modifying the first layer and the second layer by supplying a fourth gas containing nitrogen to the substrate, wherein an element capable of forming defects in the film is used as the predetermined element, and wherein in the cycle, (a) to (d) are performed in an order of: (a), (c), (b), and (d); (c), (a), (b), and (d); or (c), (a), (c), (b), and (d).
Inventors:
Ryo Ebisawa
Kiyohisa Ishibashi
Kiyohisa Ishibashi
Application Number:
JP2021159296A
Publication Date:
February 21, 2024
Filing Date:
September 29, 2021
Export Citation:
Assignee:
KOKUSAI ELECTRIC Inc.
International Classes:
H01L21/31; C23C16/42; H01L21/318
Domestic Patent References:
| JP2014183223A | ||||
| JP2014030041A | ||||
| JP2015149493A | ||||
| JP2011023576A |
Attorney, Agent or Firm:
Masahiro Fukuoka
Setsuo Aniya
Setsuo Aniya