Title:
SEMICONDUCTOR DEVICE, MANUFACTURING METHOD THEREFOR, AND LIQUID-CRYSTAL DISPLAY DEVICE
Document Type and Number:
Japanese Patent JP2001196598
Kind Code:
A
Abstract:
To provide a TFT of improved low-temperature polycrystalline thin film having high electron mobility and little manufacturing variation in characteristics, for realizing a large-area liquid-crystal display device which user a glass substrate.
A semiconductor thin-film (pseudo-singes crystal thin-film) comprising polycrystalline grain jointed with {111} twin grain boundary of diamond structure is utilized as a channel region for TFT (in short, an active region), so that a TFT of high electron mobility is realized with satisfactory reproducibility within a desired characteristics variation.
Inventors:
YAMAGUCHI SHINYA
MIYAO MASANOBU
SUGII NOBUYUKI
BOKU NARIMOTO
NAKAGAWA KIYOKAZU
MIYAO MASANOBU
SUGII NOBUYUKI
BOKU NARIMOTO
NAKAGAWA KIYOKAZU
Application Number:
JP2000326356A
Publication Date:
July 19, 2001
Filing Date:
October 26, 2000
Export Citation:
Assignee:
HITACHI LTD
International Classes:
G02F1/136; G02F1/1368; H01L21/20; H01L21/336; H01L21/338; H01L27/08; H01L29/778; H01L29/786; H01L29/812; (IPC1-7): H01L29/786; G02F1/1368; H01L21/20; H01L21/336; H01L21/338; H01L27/08; H01L29/778; H01L29/812
Attorney, Agent or Firm:
Katsuo Ogawa (2 outside)