Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2003051500
Kind Code:
A
Abstract:
To provide a semiconductor device, which is free of wire peeling, has high reliability and high yield, and is highly integrated, and to provide its manufacturing method.
The semiconductor device has a semiconductor substrate 1, an inter-layer insulating film 3 which is formed on the semiconductor substrate from a low-density material of ≤2.0 g/cm3 in density, a wiring groove 8 which is formed in the interlayer insulating film, a stress relieving layer 4 formed in at least part of the wiring groove, a barrier metal layer 5 which is formed in the wiring groove including the top of the stress retrieving layer, and a wiring layer 9, which is formed on the top surface of the barrier metal layer.
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Inventors:
HATASAKI KOJI
TOYODA HIROSHI
ITO SACHIYO
HASUNUMA MASAHIKO
TOYODA HIROSHI
ITO SACHIYO
HASUNUMA MASAHIKO
Application Number:
JP2001238673A
Publication Date:
February 21, 2003
Filing Date:
August 07, 2001
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L23/52; H01L21/3205; H01L21/768; H01L23/522; (IPC1-7): H01L21/3205; H01L21/768
Attorney, Agent or Firm:
Togawa Hideaki