Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2019050353
Kind Code:
A
Abstract:
To provide a semiconductor device in which a structure having a high aspect ratio can be provided, and a manufacturing method therefor.SOLUTION: According to an embodiment, a manufacturing method for a semiconductor device includes: alternately forming a plurality of first films and a plurality of second films on a substrate; forming a hole in the first and second films; forming a first metal layer on the hole's surface; and removing the first metal layer from the hole's bottom. The method further includes forming a second metal layer on the first metal layer's surface after removing the first metal layer from the hole's bottom. The method further includes processing the hole's bottom exposed from the first and second metal layers to increase the depth of the hole.SELECTED DRAWING: Figure 3
Inventors:
YOSHIKAWA KENICHI
Application Number:
JP2018127050A
Publication Date:
March 28, 2019
Filing Date:
July 03, 2018
Export Citation:
Assignee:
TOSHIBA MEMORY CORP
International Classes:
H01L27/11568; H01L21/3065; H01L21/336; H01L21/8239; H01L27/105; H01L27/11521; H01L27/11556; H01L27/11582; H01L29/788; H01L29/792; H01L45/00; H01L49/00
Attorney, Agent or Firm:
Hiroyuki Nagai
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Takeshi Sekine
Akaoka Akira
Jie Yamanoi
Yukitaka Nakamura
Yasukazu Sato
Satoru Asakura
Takeshi Sekine
Akaoka Akira
Jie Yamanoi