Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP3432187
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a highly integrated high-performance semiconductor device by realizing a stable high-performance semiconductor element which is less in characteristic variation and a method, by which the semiconductor device can be manufactured easily at a high yield.
SOLUTION: A TFT 123, formed on a glass substrate 101, contains a crystalline silicon film 108 as an active region. The film 108 is formed in such a way that, after a hydrogen-containing a-Si film 103 is formed on the glass substrate 101, nickel 104 is added to the surface of the film 103, and the surface of the film 103 carrying the added nickel 104 is heat-treated. The diameters of individual crystal grains in the crystalline silicon film 108 is smaller than those of individual crystal grains in the channel region of the TFT 123.
Inventors:
Naoki Makita
Masao Moriguchi
Masao Moriguchi
Application Number:
JP26848799A
Publication Date:
August 04, 2003
Filing Date:
September 22, 1999
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L21/205; H01L21/20; H01L21/336; H01L21/77; H01L21/84; H01L27/12; H01L29/768; H01L29/786; (IPC1-7): H01L21/336; H01L21/20; H01L29/786
Domestic Patent References:
| JP822954A | ||||
| JP8204206A | ||||
| JP766424A | ||||
| JP11191628A |
Attorney, Agent or Firm:
Aoyama Ryo (1 person outside)
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