Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2001127289
Kind Code:
A
Abstract:
To provide a semiconductor device with new constitution and the manufacturing method.
In an N-type silicon substrate 1, trenches 5 where the concentration of at least side walls becomes low are formed and the trenches 5 are filled with a P-type epitaxial film 14. A silicon substrate 15 where the specified layer 17 of atoms is buried by prescribed depth and the silicon substrate 1 where the trenches 5 are formed are stuck by direct junction, and they are peeled in the atom buried layer 17 of the silicon substrate 15 by heat-treating them. Then, a thin N-type silicon layer 18 is arranged on the substrate 1 where the trenches 5 are formed.
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Inventors:
ONODA KUNIHIRO
YAMAUCHI SHOICHI
SAKAKIBARA TOSHIO
YAMAGUCHI HITOSHI
YAMAUCHI SHOICHI
SAKAKIBARA TOSHIO
YAMAGUCHI HITOSHI
Application Number:
JP30765799A
Publication Date:
May 11, 2001
Filing Date:
October 28, 1999
Export Citation:
Assignee:
DENSO CORP
International Classes:
H01L21/74; H01L21/02; H01L21/20; H01L21/336; H01L29/06; H01L29/78; (IPC1-7): H01L29/78; H01L21/02
Attorney, Agent or Firm:
Hironobu Onda (1 person outside)
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