Title:
SEMICONDUCTOR DEVICE, AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2009099695
Kind Code:
A
Abstract:
To provide a semiconductor device in which local current concentration in copper wiring can be reduced and variations and an increase in copper wiring resistances can be suppressed, and to provide a manufacturing method thereof.
The semiconductor device has the copper wiring 3 formed in a first insulating film 2 on a substrate 1 and a silicon carbonitride film 4 formed on the copper wiring 3 and a first insulating film 2, wherein copper atoms in the copper wiring 3 and constituent atoms of the silicon carbonitride film 4 are microscopically bonded together.
Inventors:
YUASA HIROSHI
Application Number:
JP2007268453A
Publication Date:
May 07, 2009
Filing Date:
October 16, 2007
Export Citation:
Assignee:
PANASONIC CORP
International Classes:
H01L21/3205; H01L21/768; H01L23/52; H01L23/522
Attorney, Agent or Firm:
Yoshihiro Morimoto
Toshiji Sasahara
Yohei Harada
Toshiji Sasahara
Yohei Harada