To provide a semiconductor device including a new cyclosiloxane polymer indicating conductivity or semiconductivity.

A semiconductor device comprises a charge transport layer composed of a plasma polymer including a structural unit (A) having a transition metal as a central metal and a structural unit (B) located between adjacent structural units (A) and including a cyclosiloxane skeleton. The charge transport layer is formed by plasma-polymerizing an organic metallic compound having a transition metal as a central metal and a cyclosiloxane compound in a reactor.