To provide a manufacturing method and an equipment for a semiconductor device in which electrode terminals can be markedly lessened in connection resistance between them even if the conventional Al is used as electrode material when the electrode terminals of the semiconductor device are connected together with conductive adhesive agent.
A semiconductor chip 34 serving as a specimen is installed on a cathode electrode 35 in a plasma processing chamber 32. An oxide 39 on the surface of the electrode terminal 38 of the specimen 34 is removed by plasma 37 generated between the cathode electrode 35 and an anode electrode 36. The specimen is transferred into an application chamber 33 via an intermediate chamber 44 in which an inert gas is fed, and conductive adhesive agent paste 43 is applied on the surface of the electrode terminal 38 in an inert gas of an atmospheric pressure, being fed from a dispenser 42. The oxide 39 of the electrode terminal 38 is removed, then the conductive adhesive paste layer 43 can be formed on the surface of the electrode terminal 38 without coming into contact with oxygen contained in the air, so that a semiconductor device of small connection resistance can be manufactured.
SAEKI JUNICHI
YOSHIMI KENJI
SAKAGAMI MASAKAZU
NARUKAWA YASUHIRO
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