Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2005328072
Kind Code:
A
Abstract:
To obtain an insulating film for reducing a shallow energy level in a band gap.
A semiconductor device has an acid nitride layer 15 formed at least on the surface of a silicon substrate 1, in which nitrogen atoms is a tri-coordination bonding state, a gate insulating film 19 equipped with a silicon acid nitride film 16 having a silicon oxide layer formed between the acid nitride layer and the silicon substrate, a gate electrode 20 prepared on the gate insulating film, and source-drain regions 21a, 21b prepared in the silicon substrate of both sides of the gate electrode.
Inventors:
AOKI NOBUTOSHI
KATO KOICHI
SEKINE KATSUYUKI
MIZUSHIMA ICHIRO
KATO KOICHI
SEKINE KATSUYUKI
MIZUSHIMA ICHIRO
Application Number:
JP2005175205A
Publication Date:
November 24, 2005
Filing Date:
June 15, 2005
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L21/318; H01L29/78; (IPC1-7): H01L29/78; H01L21/318
Attorney, Agent or Firm:
Kenji Yoshitake
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki
Hidetoshi Tachibana
Yasukazu Sato
Hiroshi Yoshimoto
Yasushi Kawasaki