To provide a semiconductor device manufacturing method by which a microfabricated semiconductor device can be easily manufactured by filling an insulation film in a groove without remaining a void inside when the groove is buried with the insulation film even though the groove has a large aspect ratio.
The semiconductor device manufacturing method comprises the steps of forming an insulation film for a groove in the groove such as to have an overhang shape at an upper end of the groove formed between neighboring salients and a void at an upper portion of the groove, doping impurities into a part of the insulation film for the groove formed in the groove by injecting the impurities into the insulation film for the groove by ion implantation in a direction diagonal to a height direction of the salient, removing the impurity-doped portion of the insulation film for the groove, and filling the inside of the groove with the insulation film for the groove.
Ishibashi Masayuki
Masaaki Ogata