Title:
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD FOR SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2012089677
Kind Code:
A
Abstract:
To prevent drop of dielectric voltage in a structure where a protection film is formed on an insulation film.
A semiconductor device includes a first semiconductor layer formed on a substrate, a second semiconductor layer formed on the first semiconductor layer, a source electrode and a drain electrode formed on the second semiconductor layer, an insulation film formed on the second semiconductor layer, a gate electrode formed on the insulation film, and a protection film formed covering the insulation film. The protection film is formed by any of thermal CVD, thermal ALD, and vacuum evaporation.
Inventors:
OZAKI SHIRO
KANEMURA MASAHITO
NAKAMURA TETSUKAZU
MIYAJIMA TOYOO
TAKEDA MASAYUKI
WATABE KEIJI
YOSHIKAWA SHUNEI
IMANISHI KENJI
TAGI TOSHIHIRO
IMADA TADAHIRO
KANEMURA MASAHITO
NAKAMURA TETSUKAZU
MIYAJIMA TOYOO
TAKEDA MASAYUKI
WATABE KEIJI
YOSHIKAWA SHUNEI
IMANISHI KENJI
TAGI TOSHIHIRO
IMADA TADAHIRO
Application Number:
JP2010234961A
Publication Date:
May 10, 2012
Filing Date:
October 19, 2010
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L21/338; H01L21/205; H01L21/316; H01L29/778; H01L29/78; H01L29/786; H01L29/812
Domestic Patent References:
| JP2009117712A | 2009-05-28 | |||
| JP2009010107A | 2009-01-15 | |||
| JP2010098076A | 2010-04-30 | |||
| JP2009049121A | 2009-03-05 | |||
| JP2010080633A | 2010-04-08 |
Foreign References:
| WO2008041277A1 | 2008-04-10 | |||
| US20100117118A1 | 2010-05-13 | |||
| WO2006001369A1 | 2006-01-05 |
Attorney, Agent or Firm:
Tadahiko Ito
Akinori Yamaguchi
Akinori Yamaguchi