Title:
SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2014130983
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device manufacturing method which can inhibit hillock of Al wiring.SOLUTION: In a semiconductor device manufacturing method, by exposing a surface of a chemically active Al film 14 soon after deposition to a nitrogen atmosphere, nitrogen is adsorbed to the surface of the Al film 14 and an ultrathin Al-N layer of about one molecular layer is formed on an outermost surface of the Al film 14. Subsequently, by depositing a Ti film 15a of a barrier metal on the Al film 14, since alloying of the Al film 14 and the Ti film 15a is inhibited and a stress included in the Al film 14 is reduced, hillock of the Al wiring can be inhibited.
Inventors:
HAYASHI GOJI
KITA KENTARO
KOBORI TAKUYA
KITA KENTARO
KOBORI TAKUYA
Application Number:
JP2013016353A
Publication Date:
July 10, 2014
Filing Date:
January 31, 2013
Export Citation:
Assignee:
RENESAS ELECTRONICS CORP
International Classes:
H01L21/3205; C23C14/14; H01L21/285; H01L21/768; H01L23/532
Domestic Patent References:
| JP2001060590A | 2001-03-06 | |||
| JP2009182203A | 2009-08-13 | |||
| JP2001203204A | 2001-07-27 | |||
| JPH06310510A | 1994-11-04 | |||
| JP2001176962A | 2001-06-29 | |||
| JP2007311461A | 2007-11-29 | |||
| JP2004214358A | 2004-07-29 |
Attorney, Agent or Firm:
Yamato Tsutsui
Atsushi Sugada
Akiko Tsutsui
Tetsuya Sakaji
Atsushi Sugada
Akiko Tsutsui
Tetsuya Sakaji