Title:
SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE MANUFACTURING METHOD
Document Type and Number:
Japanese Patent JP2014192191
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor device in which a MOSFET part and a protection diode part that causes avalanche breakdown at a voltage lower than in the MOSFET part are provided on the same silicon carbide semiconductor substrate.SOLUTION: A semiconductor device 100 in which a MOSFET part 40 and a protection diode part 50 that causes avalanche breakdown at a voltage lower than in the MOSFET part 40 are provided on the same silicon carbide substrate 110 comprises: first projected regions 134 formed in the MOSFET part 40 in a region sandwiched by neighboring trenches 118 so as to project from a body layer 116 toward a drift layer 114; and a plurality of second projected regions 134a formed in the protection diode part 50 so as to project from the body layer 116 toward the drift layer 114, in which a clearance L2 between the neighboring second projected regions 134a is wider than a clearance L1 between the neighboring first projected regions 134.
Inventors:
SUGAI AKIHIKO
NAKAMURA SHUNICHI
INOUE TETSUHITO
SENDA SATORU
NAKAMURA SHUNICHI
INOUE TETSUHITO
SENDA SATORU
Application Number:
JP2013063590A
Publication Date:
October 06, 2014
Filing Date:
March 26, 2013
Export Citation:
Assignee:
SHINDENGEN ELECTRIC MFG
International Classes:
H01L27/04; H01L21/336; H01L29/12; H01L29/78; H01L29/861; H01L29/868
Domestic Patent References:
| JPH11195788A | 1999-07-21 | |||
| JP2005197439A | 2005-07-21 | |||
| JPS62123771A | 1987-06-05 | |||
| JP2010258386A | 2010-11-11 |
Foreign References:
| WO2012165329A1 | 2012-12-06 |
Attorney, Agent or Firm:
Masatake Matsuo