Title:
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
Document Type and Number:
Japanese Patent JP2023023917
Kind Code:
A
Abstract:
To provide a method for manufacturing a semiconductor device capable of easily changing a collector layer and a cathode layer to desired characteristics.SOLUTION: A method for manufacturing a semiconductor device includes the steps of: preparing a processed member 100 constituting a semiconductor substrate; ion-implanting a first impurity for forming a collector layer of a first conductivity type constituting an IGBT element into a portion serving as an IGBT region of the processed member 100; ion-implanting a second impurity for forming a cathode layer of a second conductivity type constituting an FWD element into a portion serving as an FWD region of the processed member 100; and performing laser annealing for forming a collector layer by irradiating the processed member 100 with laser beams L1 to L3 and activating the first impurity and forming a cathode layer by activating the second impurity. The step of performing laser annealing changes conditions for laser beam to be irradiated to the portion serving as the IGBT region and conditions for laser beam to be irradiated to the portion serving as the FWD region, and irradiates the portions with laser beams.SELECTED DRAWING: Figure 4
Inventors:
SUGIMURA ATSUSHI
Application Number:
JP2021129876A
Publication Date:
February 16, 2023
Filing Date:
August 06, 2021
Export Citation:
Assignee:
DENSO CORP
International Classes:
H01L21/336; H01L21/265; H01L21/268; H01L21/8234; H01L29/739; H01L29/78; H01L29/861
Attorney, Agent or Firm:
Patent Attorney Corporation Yuai Patent Office